陈敦军

微电子与光电子学系 博导

个人简历

1987-2001年就读于西北工业大学材料科学与工程系,并获博士学位,现为威斯尼斯人老品牌教授、博士生导师。2006年-2007年受哈佛大学GSAS资助在其工程与应用科学学院做邀请访问学者,2011年到瑞典皇家工学院做访问研究。2005年入选“教育部新世纪优秀人才计划”,2008年被评为南京大学中青年优秀学术带头人,2018年入选江苏省333工程第二层次培养计划。主要承担了国家自然科学基金面上/重点、国家863、973、重点研发计划等项目课题研究。发表SCI论文200余篇,获国家技术发明二等奖一项,教育部自然科学一等奖和科技发明一等奖各一项。担任Crystal Growth & Design,Applied Physics Letters,IEEE Electron Device Letters,Optics Express,IEEE Transactions on Electron Devices,Journal of Electronic Materials,Japanese Journal of Applied Physics,Chinese Physics Letter,Chinese Physics B等期刊审稿人。

研究方向

目前主要从事GaN基光电子探测器/传感器结构设计与器件工艺、GaN基异质结构设计与表征、GaN基电力电子器件及电源模块、器件物理与可靠性、新型低维半导体结构与器件等方面的研究。

主要课程

高等半导体物理,半导体光电子讲座

代表成果
  • Ge M, Ruzzarin M, Chen DJ*, Lu H, Zhang R, Zheng YD, Gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors, IEEE Electron Device Letters 40: 397 (2019).

  • Shao ZG, Chen DJ*, Lu H, R Zhang R, Zheng YD, High-gain AlGaN solar-blind avalanche photodiodes, IEEE Electron Device Letters 35: 372 (2014).

  • Shao ZG, Chen DJ*, Liu YL, Lu H, R Zhang R, Zheng YD, Significant performance improvement in AlGaN solar-blind avalanche photodiodes by exploiting built-in polarization electric field, IEEE Journal of Selected Topics in Quantum Electronics 20: 3803306 (2014).

  • Jia, XL, Chen DJ*, Lu H, Zhang R, Zheng YD, Ultrasensitive detection of phosphate using ion-imprinted polymer functionalized AlInN/GaN high electron mobility transistors, IEEE Electron Device Letters 37: 913 (2016).

  • Wang J, You HF, Guo H, Chen DJ*, Liu B, Lu H, Zhang R, Zheng YD, Do all screw dislocations cause leakage in GaN-based devices, Applied Physics Letters 116:062104 (2020).

  • Cai Q; Luo WK; Li,Q; Li M; Chen, DJ*; Lu, H; Zhang, R; Zheng, YD, AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure. Applied Physics Letters, 113: 123503 (2018).

  • Wang J; Yang GF; Xue JJ; Lei JM; Chen DJ*; Lu H; Zhang R; Zheng YD, A reusable and high sensitivity nitrogen dioxide sensor based on monolayer SnSe. IEEE Electron Device Letters 39: 599 (2018).

  • Wang J, Guo H, Chen DJ*, Liu B, Lu H, Zhang R, Zheng YD, epsilon-GaO: A promising candidate for high electron mobility transitors, IEEE Electron Device Letters 41: 1052 (2020).

  • Huang Y,Chen DJ*, Lu H, Zhang R, Zheng YD, Li L, Chen C, Chen TS, Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method,IEEE Electron Device Letters 32:1071 (2011).

  • Qiao G, Cai Q, Ma TC, Wang J, Chen XH, Xu Y, Shao ZG, Ye JD, Chen DJ*, Nanoplasmonically Enhanced High-Performance Metastable Phase α-Ga2O3 Solar-Blind Photodetectors. ACS Applied Materials & Interfaces 11: 40283 (2019).


联系方式
电话:025-83685372
邮件:djchen@nju.edu.cn
信箱:威斯尼斯人老品牌
办公地址:电子楼417

联系我们

  • TEL:025-8968 0678

    E-MAIL:jhmin@nju.edu.cn

    ADDRESS: Electronic Building 

    (Panzhonglai Building), 163 Xianlin Ave., Qixia District, Nanjing, Jiangsu Province, 210023